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dc.contributor.authorWanwilai Chaisanen_US
dc.contributor.authorRattikorn Yimnirunen_US
dc.contributor.authorSupon Anantaen_US
dc.contributor.authorDavid P. Cannen_US
dc.date.accessioned2018-09-11T09:22:50Z-
dc.date.available2018-09-11T09:22:50Z-
dc.date.issued2005-01-01en_US
dc.identifier.issn00224596en_US
dc.identifier.other2-s2.0-17744372263en_US
dc.identifier.other10.1016/j.jssc.2004.11.030en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=17744372263&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/62156-
dc.description.abstractThe electrical properties of ceramics within the TiO2-SnO2system which exhibit spinodal decomposition were investigated under different annealing conditions. Changes in the lattice parameter and the phase evolution of the spinodal decomposition, measured in terms of the volume fraction transformed X(t), were examined as a function of annealing time using X-ray diffraction. The room temperature dielectric properties were measured and compared to dielectric mixing rules. Doping with pentavalent Nb was found to slow the decomposition kinetics and a high permittivity (εr> 1000) was induced. The origin of the high permittivity is linked to the formation of an electrically heterogeneous structure which is derived from the spinodal microstructure. Lastly, it was observed that Nb-doped TiO2-SnO2ceramics exhibited non-linear current-voltage behavior which can be attributed to the negative temperature coefficient of resistance effect. © 2005 Elsevier Inc. All rights reserved.en_US
dc.subjectChemistryen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleThe effects of the spinodal microstructure on the electrical properties of TiO<inf>2</inf>-SnO<inf>2</inf>ceramicsen_US
dc.typeJournalen_US
article.title.sourcetitleJournal of Solid State Chemistryen_US
article.volume178en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsIowa State Universityen_US
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