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dc.contributor.authorSupab Choopunen_US
dc.contributor.authorNiyom Hongsithen_US
dc.contributor.authorEkasiddh Wongraten_US
dc.contributor.authorTeerasak Kamwannaen_US
dc.contributor.authorSomsorn Singkaraten_US
dc.contributor.authorPongsri Mangkorntongen_US
dc.contributor.authorNikorn Mangkorntongen_US
dc.contributor.authorTorranin Chairuangsrien_US
dc.description.abstractZnO:Al nanostructures with 1% by mole of Al were prepared by radio frequency sputtering on copper and quartz substrates. The ZnO:Al nanostructures obtained exhibited needle- or tree-like structures with the diameter ranging from 30 to 100 nm. It was suggested that these ZnO:Al nanostructures could be single-crystalline hexagonal structures growing along the direction with branching along the 〈0001〉 direction. From Hall measurement, ZnO:Al nanostructures had a resistivity in the order of 10-2 Ω·cm, a carrier concentration of 1020 cm-3, and a Hall mobility of 3 cm2·(V·s)-1. From X-ray diffraction, transmission electron microscopy and Raman results, ZnO:Al nanostructures had direction perpendicular to the surface, whereas ZnO nanobelts had the c-axis perpendicular to the surface. In addition, the growth mechanism of the wire and belt-like nanostructure could be explained by kinetics of anisotropic growth via a vapor-solid mechanism. This information would be useful for further applications of ZnO:Al nanostructures. © 2007 The American Ceramic Society.en_US
dc.subjectMaterials Scienceen_US
dc.titleGrowth kinetic and characterization of RF-Sputtered ZnO:Al Nanostructuresen_US
article.title.sourcetitleJournal of the American Ceramic Societyen_US
article.volume91en_US Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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