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dc.contributor.authorNavavan Thongmeeen_US
dc.contributor.authorMuangjai Unruanen_US
dc.contributor.authorRattikorn Yimnirunen_US
dc.contributor.authorAnucha Watcharapasornen_US
dc.contributor.authorSukanda Jiansirisomboonen_US
dc.date.accessioned2018-09-10T03:18:59Z-
dc.date.available2018-09-10T03:18:59Z-
dc.date.issued2009-12-01en_US
dc.identifier.issn15635112en_US
dc.identifier.issn00150193en_US
dc.identifier.other2-s2.0-77949280940en_US
dc.identifier.other10.1080/00150190902870168en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77949280940&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/59656-
dc.description.abstractP-E hysteresis loops of PZT and 0.9PZT - 0.1BLT ceramics were determined using a modified Sawyer-Tower circuit. Ferroelectric properties investigation of the PZT and 0.9PZT - 0.1BLT ceramics under stress levels in the range of 0-175 MPa was also carried out. The result showed that with increasing stress level, a reduction of remanent polarization was clearly observed. The result was interpreted in terms of non-180° ferroelectric domain switching processes and the decrease in switchable part of domains induced by stress applied to these materials. Copyright © Taylor & Francis Group, LLC.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleStress dependent ferroelectric properties of PZT and 0.9PZT - 0.1BLT ceramicsen_US
dc.typeJournalen_US
article.title.sourcetitleFerroelectricsen_US
article.volume382en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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