Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/58700
Full metadata record
DC FieldValueLanguage
dc.contributor.authorPosak Tippoen_US
dc.contributor.authorPisith Singjaien_US
dc.contributor.authorSupab Choopunen_US
dc.contributor.authorSumet Sakulsermsuken_US
dc.date.accessioned2018-09-05T04:28:51Z-
dc.date.available2018-09-05T04:28:51Z-
dc.date.issued2018-01-15en_US
dc.identifier.issn18734979en_US
dc.identifier.issn0167577Xen_US
dc.identifier.other2-s2.0-85029937460en_US
dc.identifier.other10.1016/j.matlet.2017.09.076en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85029937460&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/58700-
dc.description.abstract© 2017 Elsevier B.V. We reported a synthesis of quaternary B-C-N-O alloys containing boron, carbon, nitrogen, and oxygen atoms by using melamine-boric acid adduct colloidal solutions (C3N6H6·2H3BO3) as a precursor via chemical reactions. The nanocrystalline BCNO was observed by scanning electron microscope. Results from X-ray diffraction show a prominent peak at 28.13° for BCNO, indicating the interlayer distance of 0.317 nm. Elemental compositions and chemical bonds of BCNO were verified by X-ray photoemission spectroscopy. Electrical measurement of BCNO-based field effect transistors gave 0.3 cm2V−1s−1of charge mobility, 0.77 eV of band gap with 105of on/off ratio.en_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titlePreparation and electrical properties of nanocrystalline BCNOen_US
dc.typeJournalen_US
article.title.sourcetitleMaterials Lettersen_US
article.volume211en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

Files in This Item:
There are no files associated with this item.


Items in CMUIR are protected by copyright, with all rights reserved, unless otherwise indicated.