Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/55684
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dc.contributor.authorManish Kumaren_US
dc.contributor.authorAthorn Vora-uden_US
dc.contributor.authorTosawat Seetawanen_US
dc.contributor.authorJeon Geon Hanen_US
dc.date.accessioned2018-09-05T02:59:46Z-
dc.date.available2018-09-05T02:59:46Z-
dc.date.issued2016-03-01en_US
dc.identifier.issn21944296en_US
dc.identifier.issn21944288en_US
dc.identifier.other2-s2.0-84995877861en_US
dc.identifier.other10.1002/ente.201500296en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84995877861&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/55684-
dc.description.abstract© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Thermoelectric performances are usually enhanced by minimizing the thermal conductivity of materials, either by introducing superlattice structures or nanostructuring. Here, a new approach to performance enhancement, based on Seebeck coefficient improvement, is presented for Ge2Sb2Te5thin films. The electron temperature was controlled by using pulsed direct current (DC) plasma power, and the resulting structural disorder of the cubic crystalline phase enhanced the Seebeck coefficients, as supported by molecular orbital calculations. Our results demonstrate a room-temperature Seebeck coefficient of 190.8μVK-1for 200nm films deposited on glass. That′s a disorder! Here, a new approach to thermoelectric performance enhancement, based on Seebeck coefficient improvement, is presented for Ge2Sb2Te5thin films. The electron temperature was controlled by using pulsed direct current (DC) plasma power, and the resulting structural disorder of the cubic crystalline phase enhanced the Seebeck coefficients, as supported by molecular orbital calculations. Our results demonstrate a room-temperature Seebeck coefficient of 190.8μVK-1for 200nm films deposited on glass.en_US
dc.subjectEnergyen_US
dc.titleEnhancement in Thermoelectric Properties of Cubic Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>Thin Films by Introducing Structural Disorderen_US
dc.typeJournalen_US
article.title.sourcetitleEnergy Technologyen_US
article.volume4en_US
article.stream.affiliationsSungkyunkwan Universityen_US
article.stream.affiliationsRajabhat Universityen_US
article.stream.affiliationsChiang Mai Universityen_US
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