Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process

Abstract

© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed.