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dc.contributor.authorChupong Pakpumen_US
dc.contributor.authorNirut Pussadeeen_US
dc.description.abstractThe experimental trials were conducted by design of experiments (DOE) technique to find an anisotropic wet etching condition that achieves 90° wall angle on silicon (100) orientation wafer. Three considered factors assigned to the DOE were NaOH concentration, solution temperature, and stirring speed. The response aimed for this study was not only targeting at 90° wall but also providing highest etch rate. The experimental results showed that in order to fabricate the 90° wall angle, the best etching condition using was 30% wt NaOH concentration, 80°C solution temperature, and 300 rpm stirring speed. This condition gave an etch rate of 1245 nm/min with surface roughness (Ra) of 701.48 nm. © (2014) Trans Tech Publications, Switzerland.en_US
dc.titleFabrication of 90° wall of {100} plane on (100) Si by NaOH solution via design of experimentsen_US
dc.typeBook Seriesen_US
article.title.sourcetitleAdvanced Materials Researchen_US
article.volume909en_US Universityen_US Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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