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dc.contributor.authorSomrit Unaien_US
dc.contributor.authorNitipon Puttaraksaen_US
dc.contributor.authorNirut Pussadeeen_US
dc.contributor.authorKanda Singkaraten_US
dc.contributor.authorMichael W. Rhodesen_US
dc.contributor.authorHarry J. Whitlowen_US
dc.contributor.authorSomsorn Singkaraten_US
dc.description.abstractFor soft lithography, the conventional negative tone resists, such as SU-8, that are used to create the mold have a number of drawbacks. PMMA, which is normally used as a positive tone resist, can be used as a negative resist by using high-fluence irradiation conditions. In this report, we outline optimization of the irradiation conditions for PMMA thin films using 2 MeV H+ions to exploit their ability to work as a negative tone resist at ion fluences above 1.0 × 1015ions cm-2. The main aim was to induce cross-linking while maintaining the exposed regions free of blisters and maintaining short irradiation times. We found that by using a two-step process with a low-flux irradiation, followed by a high-flux irradiation, the exposure time could be shortened by ∼50%. We also found that ion fluences greater than 5.0 × 1015ions cm-2minimized the distortion in stitched regions. © 2011 Elsevier B.V. All rights reserved.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleFast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protonsen_US
article.title.sourcetitleMicroelectronic Engineeringen_US
article.volume102en_US Mai Universityen_US Carolina Commission on Higher Educationen_US of Jyvaskylaen_US
Appears in Collections:CMUL: Journal Articles

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