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dc.contributor.authorP. Ketsuwanen_US
dc.contributor.authorA. Prasatkhetragarnen_US
dc.contributor.authorA. Ngamjarurojanaen_US
dc.contributor.authorS. Anantaen_US
dc.contributor.authorR. Yimnirunen_US
dc.description.abstractThe aging of dielectric properties of Cr-Doped Pb(Zr0.52Ti0.48)O3were investigated. The composition of Pb(Zr0.52Ti0.48)O3with 0.1, 0.2, 0.4, 0.6, 1.0 and 3.0 mol% of Cr2O3addition were prepared by conventional mixed oxide technique. The aging has been measured at room temperature after quenching from high temperatures above the Curie temperature. The dielectric aging of all compositions revealed relaxor aging behavior. The aging rate of stable stage obeyed a logarithmic time dependence, while the aging rate decreased with increasing Cr2O3at low concentration (0.1-0.6). Further increase in Cr2O3concentration, the aging rate turned to increase. © 2013 Copyright Taylor and Francis Group, LLC.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleDielectric aging of Cr-doped PZT ceramicsen_US
article.title.sourcetitleIntegrated Ferroelectricsen_US
article.volume149en_US of Phayaoen_US Mai Universityen_US University of Technologyen_US
Appears in Collections:CMUL: Journal Articles

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