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dc.contributor.authorNitipon Puttaraksaen_US
dc.contributor.authorMari Naparien_US
dc.contributor.authorOrapin Chienthavornen_US
dc.contributor.authorRattanaporn Noraraten_US
dc.contributor.authorTimo Sajavaaraen_US
dc.contributor.authorMikko Laitinenen_US
dc.contributor.authorSomsorn Singkaraten_US
dc.contributor.authorHarry J. Whitlowen_US
dc.description.abstractThe lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland.en_US
dc.titleDirect writing of channels for microfluidics in silica by MeV ion beam lithographyen_US
dc.typeBook Seriesen_US
article.title.sourcetitleAdvanced Materials Researchen_US
article.volume254en_US of Jyvaskylaen_US Mai Universityen_US Universityen_US Carolina Commission on Higher Educationen_US
Appears in Collections:CMUL: Journal Articles

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